Zeolite L crystals loaded with a fluorescing donor dye and modified at the external surface with an acceptor dye are studied on a semiconductor surface.
Radiationless excitation energy transfer from the donor dye to the acceptor dye and further through a thin insulating layer to the semiconductor is observed. The picture explains the organization of the dye-zeolite L semiconductor system. We show the structure of a single channel of an ATTO680,DXP-zeolite L on a silicon surface with an insulating SiO₂ layer. The arrows indicate light absorption (ΔE) and radiationless excitation energy transfer (EnT).

This work was carried out in the group of Prof. Gion Calzaferri.

References:

• S. Huber, G. Calzaferri;
  "Energy Transfer from Dye–Zeolite L Antenna Crystals to Bulk Silicon "
  ChemPhysChem, 5, 239-242, (2004); doi:10.1002/cphc.200301002.